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Gallium arsenide epitaxial structures
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
GaAs-based epitaxial structures grown by molecular beam epitaxy designed for the production of microwave monolithic integrated circuits (MICs) for radio electronic equipment for various purposes
Specifications
Maximum plate diameter
6 mm
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Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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