
DMOS N-channel transistor An2N65
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
DMOS N-channel transistor An2N65
Specifications
Housing type
Hull-less
Type of acceptance
QA
Maximum allowable voltage
650 V
Maximum permissible current
2 A
Drain-to-source resistance in open state
4.5 ohm
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