The unit is designed to realise the following tasks:anisotropic plasma etching of silicon oxide through a photoresist mask;plasma (anisotropic) vertical etching of holes in silicon with smooth walls through an oxide mask to a depth of (50 - 150) µm without using Bosch-technology;defect-free removal of photoresist from the wafer surface in oxygen plasma. Complexes are available in the following types: anisotropic plasma etching of silicon oxide through a photoresist mask; plasma (anisotropic) vertical etching of holes in silicon with smooth walls through an oxide mask to a depth of (50 - 150) ?m without the use of Bosch-technology; defect-free removal of photoresist from the wafer surface in oxygen plasma.
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