Single-Zone Multi-Tube Diffusion System SDOM-3/100 for Silicon Plate Processing

System diffusion single-zone multi-tube model SDOM-3/100 is designed for automatic gas-thermal treatment of silicon wafers with a diameter of 50 ... 100 mm by diffusion and oxidation in the flow of vapour-gas mixture in the chamber of an open (direct-flow) quartz reactor in the production of semiconductor electronics products at temperatures from 600 ° C to 1200 ° C (briefly up to 1300 ° C). Internal diameter of the heating chamber, mm-160; Internal diameter of the heating element not less than 180 mm; The length of the working heat zone is not less than 600 mm; Time of heating up the electric furnace to the maximum working temperature not more than - 2 hours; Working medium gaseous: argon, oxygen, nitrogen, - humidified oxygen (humidified nitrogen); <ul> <li>- temperature distribution error along the length of the working zone, not more, °?

- ±1.0.</li> </ul>Average service life is not less than 6 years. Overall dimensions DxWxH, mm not more: 4000x1030x2850; Weight, kg, not more than 2200.