
H series microelectronic force transducers
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
The H-series microelectronic strain gauges are designed for the proportional conversion of force into an electrical signal. New solutions in pressure measurement - Silicon on Sapphire technology. The sensitive element of strain gauges is a two-layer sapphire-titanium membrane with monocrystalline silicon strain gauges. Monocrystalline sapphire membrane is an ideal elastic element and in combination with titanium it acquires the leading quality in terms of deformation level, retains elastic properties up to +400°?. Monocrystalline silicon strain gauges are connected to sapphire at the atomic level (heteroepitaxy method) and work practically without hysteresis and fatigue phenomena in time. Unique insulating properties and radiation resistance of sapphire allow to operate the sensitive element in the temperature range from -200 to +350°C, at high electromagnetic interference and radiation exposure. Strain-sensitive elements are manufactured in groups...
Specifications
Range of labor force
300
Operating temperature range
-50...80 °C
Weight
10 g
Electrical insulation strength
500 V
Output signal, mV
150-250
Nonlinearity
0.2 %
Warranty period
24
Variation
0.1 %
Dustproof
IP30
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Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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