Flash-type electrically reprogrammable ROM chip with 16 Mbit memory capacity (2M x 8 / 8 sectors of 2 Mbit, 1024 pages of 16 Kbit each), interfaces: Serial, Parallel, SPI (operating frequency up to 50 MHz), Supply voltage 3 to 3.6 V, input tolerance 5 V, Current consumption - static up to 1 mA, dynamic up to 50 mA, storage time 25 years, number of rewrite cycles 20 000, ESD 2 kV, access time 55 ns, operating temperature -40 to +85 deg., QFN64
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