Flash Memory Chip NRTSh.431214.003-01TU (GSN2517Y)
US$0.30-2.40
Power supply voltage:
2.5
Operating temperature:
85
GS NANOTECH OJSC 🇷🇺
Static Random Access Memory Chip K1645RU6U (K1645RU6UK)
US$0.90-6
SOSU:
16000000
Power supply voltage:
3...3.6
MILANDR OJSC 🇷🇺
2 Kbit Special Purpose Memory Module with Fault Protection - 1620РУ6УНИ
US$3-18
Data:
512x4 digit capacity, 2.5 µm CMOS technology, Supply voltage from 4.5V to 7.5V, Read/write cycle, not less than 850 ns / 850 ns, Sampling time, not more than 300 ns, Current consumption in storage mode, not more than 8 mA, Dynamic current consumption, not
Type of product according to PP RF 616:
Integrated electronic circuits
RFNC-VNIIEF SUE 🇷🇺
Special Resistant SOZU 64 Kbit 1658РУ1У
US$6-60
Data:
8Kx8 digit capacity, CMOS technology, CED 0.35 µm, Supply voltage 3.3V ± 10%, Read/write cycle, not less than 60 ns / 80 ns, Sampling time, not more than 60 ns, Current consumption in storage mode, not more than 5 mA, Dynamic current consumption, not more
Type of product according to PP RF 616:
Integrated electronic circuits
RFNC-VNIIEF SUE 🇷🇺
Static RAM Memory Chip K1645RU6U1 (K1645RU6U1K)
US$3-18
SOSU:
16000000
Power supply voltage:
3...3.6
MILANDR OJSC 🇷🇺
NOR Flash Memory Chip for Compact Devices GSN2516Y
US$0.90-3.60
Operating temperature, degrees Celsius:
-40 to +85
Operating temperature, degrees Celsius:
-40 to +85
GS NANOTECH OJSC 🇷🇺
16M Static Random Access Memory Integrated Circuit K1645RU61U1
US$3-18
Operating temperature range:
185
Case:
64-pin ceramic-metal housing
MILANDR OJSC 🇷🇺
Special Resistant SOZU 1MB 1665РУ1У
US$3-18
Data:
128Kx8 digit capacity, CMOS technology 0.24 µm CED, Supply voltage 3.3V ± 10%, Read/write cycle, not less than 35 ns / 50 ns, Sampling time, not more than 35 ns, Current consumption in storage mode, not more than 5 mA, Dynamic current consumption, not more
Type of product according to PP RF 616:
Integrated electronic circuits
RFNC-VNIIEF SUE 🇷🇺
